Work

180-GHz Gain-Bandwidth Product Back-Side-Illuminated GaInAs–AlInAs APDs

Year: 2009

Type: article

Source: IEEE Photonics Technology Letters

DOI: 10.1109/lpt.2009.2015959

Authors: A. Rouvie, D. Carpentier, J. Decobert, N. Lagay, F. Pommereau, M. Achouche

Institution: III V Lab

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2108152829

FWCI: 1.031

Cites: 6

Cited by: 10

Related to: 10