Work

Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy

Year: 1994

Type: article

Source: IEEE Photonics Technology Letters

DOI: 10.1109/68.324672

Authors: R.M. Lammert, T.M. Cockerill, D.V. Forbes, G.M. Smith, J.J. Coleman

Institutions: University of Illinois Urbana-Champaign, University of Illinois System

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2108280642

FWCI: 5.752

Cites: 9

Cited by: 22

Related to: 10