Work

Hot-carrier induced degradation and recovery in polysilicon-emitter bipolar transistors

Year: 2002

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(02)00112-0

Authors: S.R Sheng, S.P McAlister, C Storey, L.-S Lee, H.P Hwang

Institutions: Institute for Microstructural Sciences, National Research Council Canada, Industrial Technology Research Institute

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2108448667

FWCI: 0.688

Cites: 12

Cited by: 5

Related to: 10