Work

Component-Level Measurement for Transient-Induced Latch-up in CMOS ICs Under System-Level ESD Considerations

Year: 2006

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2006.882203

Authors: M.-D. Ker, S.-F. Hsu

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2108680305

FWCI: 3.609

Cites: 19

Cited by: 55

Related to: 10