Electrical properties of SiN/GaN MIS diodes formed by ECR-CVD
Year: 2002
Type: article
Source: Solid-State Electronics
Institution: National Yang Ming Chiao Tung University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: National Science Council
OpenAlex ID: W2109643196