Minimization of threshold voltage variation to AVT=1.3mVµm in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology
Year: 2010
Type: conference-paper
Source: Symposium on VLSI Technology
Institution: Semiconductor Leading Edge Technologies, Inc (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2110658287