Work

A Drain-Lag Model for AlGaN/GaN Power HEMTs

Year: 2007

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/mwsym.2007.379972

Authors: O. Jardel, F. De Groote, C. Charbonniaud, T. Reveyrand, J. P. Teyssier, R. Quere, D. Floriot

Institutions: Centre National de la Recherche Scientifique, XLIM, Université de Limoges, III V Lab

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2110944837

FWCI: 7.953

Cites: 8

Cited by: 60

Related to: 10