A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices
Year: 2000
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.847375
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2113604576
