Work

kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

Year: 2013

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2013.2284248

Authors: Y.-F. Wu, J. Gritters, L. Shen, R. P. Smith, B. Swenson

Institution: Transphorm (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2114200441

FWCI: 4.141

Cites: 4

Cited by: 116

Related to: 10