Work

Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D "atomistic" simulation study

Year: 1998

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.735728

Author: A. Asenov

Institution: University of Glasgow

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2115073796

FWCI: 12.11

Cites: 21

Cited by: 657

Related to: 10