Work

A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs

Year: 1999

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.784188

Authors: Tahui Wang, Lu-Ping Chiang, Nian-Kai Zous, Charng-Feng Hsu, Li-Yuan Huang, Tien-Sheng Chao

Institutions: National Yang Ming Chiao Tung University, Institute of Electrophysics

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Taiwan University

OpenAlex ID: W2116244366

FWCI: 2.533

Cites: 15

Cited by: 45

Related to: 10