Work

In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control

Year: 2002

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(02)01863-8

Authors: A. Bonanni, D. Stifter, A. Montaigne-Ramil, K. Schmidegg, K. Hingerl, H. Sitter

Institutions: Johannes Kepler University of Linz, Upper Austrian Research, PROFACTOR GmbH (Austria)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2118826401

FWCI: 1.466

Cites: 12

Cited by: 26

Related to: 10