Work

Annealing of radiation damage in MOS devices: Study by diode parameter determination

Year: 1999

Type: article

Source: The European Physical Journal Applied Physics

DOI: 10.1051/epjap:1999114

Authors: E. Bendada, K. Raïs

Institution: Chouaib Doukkali University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2118910746

FWCI:

Cites:

Cited by: 4

Related to: 10