Work

Copper Oxide Edge-Termination for GaN Schottky Barrier Diodes with Low Turn-on Voltage

Year: 2012

Type: article

Source: MRS Proceedings

DOI: 10.1557/opl.2012.81

Authors: Yuichi Minoura, Naoya Okamoto, Masahito Kanamura, Tadahiro Imada, Toshihiro Ohki, Kenji Imanishi, Keiji Watanabe, Kazukiyo Joshin, Toshihide Kikkawa

Institution: Fujitsu (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2118917477

FWCI:

Cites: 11

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Related to: 10