Work

Gated photodetector based on GaN/AlGaN heterostructurefieldeffect transistor

Year: 1995

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19950247

Authors: M.A. Khan, M.S. Shur, Q. Chen, J.N. Kuznia, C.J. Sun

Institution: University of Virginia

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2120239173

FWCI: 2.535

Cites: 6

Cited by: 89

Related to: 10