Work

Drain Current Model Including Velocity Saturation for Symmetric Double-Gate MOSFETs

Year: 2008

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2008.926745

Authors: Venkatnarayan Hariharan, Juzer Vasi, V. Ramgopal Rao

Institution: Indian Institute of Technology Bombay

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Synopsys, Indian Institute of Technology Bombay

OpenAlex ID: W2124264580

FWCI: 1.497

Cites: 29

Cited by: 22

Related to: 10