Work

Achievement of High Density InAs Quantum Dots on InP (311)B Substrate Emitting at 1.55 µm

Year: 2005

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.44.l1069

Authors: P. Caroff, N. Bertru, A. Le Corre, O. Dehaese, T. Rohel, I. Alghoraibi, H. Folliot, S. Loualiche

Institution: Institut National des Sciences Appliquées de Rennes

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2124729348

FWCI: 3.506

Cites: 14

Cited by: 40

Related to: 10