Work

A small-signal model for the frequency-dependent drain admittance in floating-substrate MOSFET's

Year: 1992

Type: article

Source: IEEE Journal of Solid-State Circuits

DOI: 10.1109/4.148327

Authors: R. Howes, W. Redman-White

Institution: University of Southampton

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2125014265

FWCI: 1.391

Cites: 9

Cited by: 46

Related to: 10