Work

Temperature effect on the performance of a traveling wave amplifier in 130 nm SOI technology

Year: 2005

Type: conference-paper

Source: Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium

DOI: 10.1109/rfic.2005.1489854

Authors: M. Si Moussa, C. Pavageau, F. Danneville, J. Russat, N. Fel, J.-P. Raskin, D. Vanhoenacker-Janvier

Institutions: UCLouvain, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Institut d'Electronique, de Microélectronique et de Nanotechnologie

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2129123720

FWCI: 2.257

Cites: 5

Cited by: 5

Related to: 10