Work

Direct Measurement of Correlation Between SRAM Noise Margin and Individual Cell Transistor Variability by Using Device Matrix Array

Year: 2011

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2011.2138142

Authors: Toshiro Hiramoto, Makoto Suzuki, Xiaowei Song, Ken Shimizu, Takuya Saraya, Akio Nishida, Takaaki Tsunomura, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami

Institutions: Semiconductor Leading Edge Technologies, Inc (Japan), Institute of Industrial Science, The University of Tokyo, The University of Tokyo

Language: English

Topic: Low-power high-performance VLSI design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2129144647

FWCI: 6.285

Cites: 31

Cited by: 71

Related to: 10