Work

A novel high-voltage sustaining structure with buried oppositely doped regions

Year: 2000

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.842974

Authors: Xing Bi Chen, Xin Wang, J.K.O. Sin

Institutions: University of Electronic Science and Technology of China, Hong Kong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2129392902

FWCI: 1.729

Cites: 9

Cited by: 53

Related to: 10