Work

A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential

Year: 2005

Type: article

Source: International Journal of Electronics

DOI: 10.1080/00207210500114083

Authors: V. P. Kiran, R. G. Kumar, A. K. Singh *, S. Gurunarayanan

Institution: Birla Institute of Technology and Science, Pilani

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2129691998

FWCI:

Cites: 18

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Related to: 10