Year: 2011
Type: article
Abstract: We demonstrate spin accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/n+-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect curves, i.e., spin accumulation signals. The magnitude of spin accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/n+-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.
Source: Applied Physics Letters
DOI: 10.1063/1.3643141
Authors: Y. Ando, Y. Maeda, K. Kasahara, S. Yamada, K. Masaki, Y. Hoshi, K. Sawano, K. Izunome, A. Sakai, M. Miyao, K. Hamaya
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2134177992