Work

Growth defects in GaN layers on top of (0001) sapphire: A geometrical investigation of the misfit effect

Year: 2000

Type: article

Source: Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties

DOI: 10.1080/01418610008212091

Authors: P. Ruterana, V. Potin, B. Barbaray, G. Nouet

Institution: Centre National de la Recherche Scientifique

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Virginia Commonwealth University

OpenAlex ID: W2134792181

FWCI: 3.498

Cites: 20

Cited by: 53

Related to: 10