Work

Structure and morphology of c-SiC films obtained by acetylene reaction with Si(111) surface

Year: 2002

Type: article

Source: Solid State Communications

DOI: 10.1016/s0038-1098(02)00200-4

Authors: M. De Crescenzi, R. Bernardini, R. Gunnella, P. Castrucci

Institution: Università di Camerino

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2135220039

FWCI: 2.407

Cites: 38

Cited by: 10

Related to: 10