Work

Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics

Year: 2010

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2010.2073439

Authors: Kwang Hwan Ji, Ji-In Kim, Yeon-Gon Mo, Jong Han Jeong, Shinhyuk Yang, Chi-Sun Hwang, Sang-Hee Ko Park, Myung-Kwan Ryu, Sang-Yoon Lee, Jae Kyeong Jeong

Institutions: Inha University, Samsung (South Korea), Samsung Display (South Korea), Electronics and Telecommunications Research Institute, Samsung Advanced Institute of Technology (South Korea)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2135954772

FWCI: 12.01

Cites: 17

Cited by: 185

Related to: 10