Work

Experimental Investigation of RF Noise Performance Improvement in Graded-Channel MOSFETs

Year: 2009

Type: article

Abstract: In this paper, measured RF noise performance of graded-channel metal-oxide-semiconductor (MOS) transistors (GCMOS - also named laterally asymmetric channel transistors) shows impressive reduction in minimum noise figure (NFmin) as compared to classical MOSFET transistors (with the same gate lengthLg= 0.5 mum). The reason is proven to be because of the higher noise correlation coefficient (C). GCMOS also shows lower sensitivity to extrinsic thermal noise as compared to classical MOSFET. Moreover, it is demonstrated that the use of 0.5- mum-gate-length GCMOS gives a competitive RF noise performance as compared to 0.25-mum-gate-length classical nMOS transistors.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2009.2021361

Authors: Mostafa Emam, Paulius Sakalas, Danielle Vanhoenacker-Janvier, Jean-Pierre Raskin, Tao Chuan Lim, FranÇois Danneville

Institutions: UCLouvain, Technische Universität Dresden

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Fonds Wetenschappelijk Onderzoek

OpenAlex ID: W2136014596

FWCI: 3.351

Cites: 24

Cited by: 29

Related to: 10