Work

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

Year: 2004

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.2004.1345386

Authors: P.R. Chidambaram, B.A. Smith, L.H. Hall, H. Bu, S. Chakravarthi, Y. Kim, A.V. Samoilov, A.T. Kim, P.J. Jones, R.B. Irwin, M.J. Kim, A.L.P. Rotondaro, C.F. Machala, D.T. Grider

Institutions: Texas Instruments (United States), Applied Materials (United States), The University of Texas at Dallas

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2136139312

FWCI: 18.68

Cites:

Cited by: 91

Related to: 10