Work

GaN growth on (30&3macr;8) 4H‐SiC substrate for reduction of internal polarization

Year: 2005

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200461390

Authors: S. Kamiyama, A. Honshio, T. Kitano, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, H. Shiomi

Institutions: Meijo University, SiXON (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Education, Culture, Sports, Science and Technology

OpenAlex ID: W2137185366

FWCI: 2.498

Cites:

Cited by: 27

Related to: 10