Work

Influence of Electron‐Electron Interactionon Electron Distributions in Short Si‐MOSFETsAnalysed Using the Local IterativeMonte Carlo Technique

Year: 2001

Type: article

Abstract: The effects of electron–electron interaction on the electron distribution in n‐channel metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron–electron scattering can be efficiently treated within this technique. The simulation results of a 90 nm Si‐MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain.

Source: VLSI design

DOI: 10.1155/2001/68217

Authors: T. Mietzner, J. Jakumeit, U. Ravaioli

Institutions: University of Cologne, Fraunhofer Institute for Algorithms and Scientific Computing, University of Illinois Urbana-Champaign

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: National Science Foundation, Semiconductor Research Corporation, Deutsche Forschungsgemeinschaft

Awards: G1519871867, A National Center for Computational Electronics