Work

A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs

Year: 2014

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/jnm.1971

Authors: Pradipta Dutta, Binit Syamal, Nagarajan Mohankumar, Chandan Kumar Sarkar

Institutions: KIIT University, Jadavpur University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2137463189

FWCI: 0.649

Cites: 24

Cited by: 8

Related to: 10