Work

Photoconductive decay lifetime and Suns-Voc diagnostics of efficient heterojunction solar cells

Year: 2008

Type: conference-paper

Abstract: Minority carrier lifetime and Suns-Vocmeasurements are well-accepted methods for characterization of solar cell devices. We use these methods, with an instrument from Sinton Consulting, as we fabricate and optimize state-of-the-art all hot-wire chemical vapor deposition (HWCVD) silicon heterojunction (SHJ) devices. For double-sided SHJ devices, lifetime measurements were performed immediately after hydrogenated amorphous silicon (a-Si:H) deposition of the front emitter and back base contacts on a Silicon wafer, and also after indium tin oxide (ITO) deposition of transparent conducting oxide contacts. We report results of minority carrier lifetime measurements for double-sided p-type Si heterojunction devices and compare Suns-Vocresults to Light I–V measurements on 1-cm2solar cell devices measured on an AM1.5 calibrated XT-10 solar simulator.

Source: Conference record of the IEEE Photovoltaic Specialists Conference

DOI: 10.1109/pvsc.2008.4922683