Work

Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

Year: 2010

Type: article

Abstract: It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by a single heavy ion. It was identified as a microdose effect and successfully characterized by several parameters extracted from the experimental data.

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2010.2081686

Authors: Satoshi Kuboyama, Akifumu Maru, Naomi Ikeda, Toshio Hirao, Takashi Tamura

Institutions: Japan Aerospace Exploration Agency, Japan Atomic Energy Agency

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funder: Japan Atomic Energy Agency

OpenAlex ID: W2139094298

FWCI: 1.43

Cites: 7

Cited by: 27

Related to: 10