Work

Modeling, Simulation, and Validation of a Power SiC BJT

Year: 2012

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2012.2190622

Authors: Tanya Gachovska, Jerry L. Hudgins, Angus Bryant, Enrico Santi, H. Alan Mantooth, Anant K. Agarwal

Institutions: University of Nebraska–Lincoln, University of South Carolina, University of Arkansas at Fayetteville, Wolfspeed, Inc. (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: McGill University, University of Ruse, University of Warwick

OpenAlex ID: W2139149086

FWCI: 2.201

Cites: 15

Cited by: 29

Related to: 10