Year: 2014
Type: article
Abstract: In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.
Authors: P. Suveetha Dhanaselvam, N.B. Balamurugan, G.C. Vivek Chakaravarthi, R.P. Ramesh, B.R. Sathish Kumar
Institution: Thiagarajar College of Engineering
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2139185745