Work

Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

Year: 1996

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.588468

Authors: P. De Bisschop, J. Gomez, L. Geenen, W. Vandervorst

Institution: IMEC

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2139331608

FWCI: 0.517

Cites:

Cited by: 2

Related to: 10