An analytical drain current model considering both electron and lattice temperatures simultaneously for deep submicron ultrathin SOI NMOS devices with self-heating
Year: 1995
Type: article
DOI: 10.1109/16.381986
Institutions: National Taiwan University, Stanford University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2139362028