Work

The Growth of Effective Potential Barrier Height in Au/ (100) n-GaP Contact Induced by Phosphorous Ion Implantation

Year: 1992

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-262-1115

Authors: Anatol I. Ivashchenko, F.Ya. Kopanskaya, A. I. Solomonov, V. P. Tarchenko

Institution: Institute of Applied Physics

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2139759366

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Cites: 10

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Related to: 10