Year: 1987
Type: article
Abstract: In glass/TCO/p(a-SiC:H)-i-n/Cr type hydrogenated amorphous silicon solar cells fabricated by a rf glow-discharge decomposition method, it was observed that the photocurrent in the short-wave length region mainly decreased after a thermal treatment of the sample. In terms of a simple model in which the dopant diffusion makes a dead layer near the p/i interface, the phenomenon of the photocurrent decrease is discussed. The dopant diffusion coefficients and the lifetimes of the solar cells were estimated.
DOI: 10.1143/jjap.26.889
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2145973449