Work

Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

Year: 1971

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/t-ed.1971.17156

Author: W. Baechtold

Institution: IBM Research - Zurich

Language: English

Topic: Radio Frequency Integrated Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2145994849

FWCI: 7.227

Cites: 12

Cited by: 49

Related to: 10