Work

Nitrogen ion implantation isolation technology for normally‐off GaN MISFETs on p‐GaN substrate

Year: 2014

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201300436

Authors: Hayao Kasai, Hiroki Ogawa, Tomoaki Nishimura, Tohru Nakamura

Institution: Hosei University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Synopsys, Ministry of Education, Culture, Sports, Science and Technology, University of Tokyo

OpenAlex ID: W2147308352

FWCI: 0.631

Cites:

Cited by: 16

Related to: 10