Work

Impact of Highly Compressive Interlayer-Dielectric-$ \hbox{SiN}_{x}$ Stressing Layer on $\hbox{1}/f$ Noise and Reliability of SiGe-Channel pMOSFETs

Year: 2010

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2010.2073438

Authors: Yu-Ting Chen, Kun-Ming Chen, Wen-Shiang Liao, Guo-Wei Huang, Fon-Shan Huang

Institutions: National Tsing Hua University, National United University, National Yang Ming Chiao Tung University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2147616554

FWCI: 0.504

Cites: 16

Cited by: 2

Related to: 10