Year: 2010
Type: article
Abstract: We introduce a model that accounts for the bipolar resistive switching phenomenon observed in transition-metal oxides. It qualitatively describes the electric-field-enhanced migration of oxygen vacancies at the nanoscale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces leading to spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce nontrivial resistance hysteresis experiments that we also report providing key validation to our model.
Source: Physical Review B
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Award: G4359570771
OpenAlex ID: W2147667149