Work

Characterization of SiC Schottky diodes at different temperatures

Year: 2003

Type: article

Source: IEEE Power Electronics Letters

DOI: 10.1109/lpel.2003.821026

Authors: B. Ozpineci, L.M. Tolbert

Institutions: Oak Ridge National Laboratory, University of Tennessee at Knoxville

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W2147765702

FWCI: 2.348

Cites: 17

Cited by: 98

Related to: 10