Work

Barrier capability of TaNx films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaNx/n+–p junction diodes

Year: 2001

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(00)00228-8

Authors: Wen Luh Yang, Wen-Fa Wu, Don-Gey Liu, Chi-Chang Wu, Keng Liang Ou

Institutions: Feng Chia University, National Yang Ming Chiao Tung University

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Council, Feng Chia University

OpenAlex ID: W2148654915

FWCI: 4.134

Cites: 24

Cited by: 64

Related to: 10