Work

Realization of Robust 600V High Side Gate Drive IC with a New Isolated Self-Shielding Structure

Year: 2005

Type: conference-paper

Source: IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

DOI: 10.1109/ispsd.2005.1487971

Author: C. K. Jeon S. L. Kim

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2149118922

FWCI: 1.129

Cites: 5

Cited by: 29

Related to: 10