Work

Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs

Year: 2008

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2008.2006109

Authors: Aritra Dey, Anjan Chakravorty, Nandita DasGupta, Amitava DasGupta

Institutions: Indian Institute of Technology Madras, Arizona State University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Jadavpur University, Hochschule Darmstadt, Indian Institute of Technology Madras, Indian Institute of Technology Kharagpur

OpenAlex ID: W2149205172

FWCI: 6.585

Cites: 15

Cited by: 85

Related to: 10