Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics
Year: 2000
Type: article
Source: Materials science forum
Authors: Nao Miyamoto, A. Saitoh, Tsunenobu Kimoto, Hiroyuki Matsunami, Y. Hishida, Masanori Watanabe
Institutions: Kyoto University, Ion Technology Center (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2150488704