Work

A gate-side air-gap structure (GAS) to reduce the parasitic capacitance in MOSFETs

Year: 2002

Type: conference-paper

Source: Symposium on VLSI Technology

DOI: 10.1109/vlsit.1996.507785

Authors: M. Togo, A. Tanabe, A. Furukawa, K. Tokunaga, T. Hashimoto

Institution: NEC (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2151695366

FWCI: 0.751

Cites:

Cited by: 26

Related to: 10