Work

Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

Year: 2012

Type: article

Source: IEEE Industrial Electronics Magazine

DOI: 10.1109/mie.2012.2193291

Authors: J. Rabkowski, D. Peftitsis, H. Nee

Institution: KTH Royal Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2152012503

FWCI: 14.65

Cites: 43

Cited by: 427

Related to: 10